MJE13009 datasheet(2/6 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-ca se

Thermal Resistance Ju nction- case

Max

1.25

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEV

Collecto r Cu t-of f

Current

VCEV = rated value

VBE(off) =1.5 V

VCEV = rated value

VEB(off) =1.5 V

Tcas e = 100

IEBO

Emitter Cut-off

Current (IC =0)

VEB =9 V

VCEO(su s)

∗ Collector-Emitter

Sustaining Voltage

IC =10 mA

IE = 0

400

VCE(sat)

∗ Collector-Emitter

Satu ration Vo ltage

IC =5 A

IB =1 A

IC =8 A

IB =1.6 A

IC =12 A

IB =3 A

IC =8 A

IB =1.6 A

Tcas e = 100

1. 5

VBE(sat)

∗ Base-Emitter

Satu ration Vo ltage

IC =5 A

IB =1 A

IC =8 A

IB =1.6 A

IC =8 A

IB =1.6 A

Tcase = 100

1. 2

1. 6

1. 5

hFE

∗

DC Current Gain

IC =5 A

VCE =5 V

IC =8 A

VCE =5 V

Transistor Frequ ency

IC = 500 mA

VCE =10 V

MHz

COB

Output Capacita nce

VCB =10 A

IE =0

f= 0.1 MHz

180

ton

Turn-on Time

Storage Time

Fall Time

RESISTIVE LOAD

VCC =125 V

IC =8A

IB1 =-IB2 =1 .6 A

tp =25

µs

Duty Cycle

≤ 1%

1. 1

0. 7

µs

∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 2%

Safe Operating Areas

Derating Curve

MJE13009

2/6

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