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STQ1NC45R-AP Datasheet(PDF) 5 Page - STMicroelectronics

Part # STQ1NC45R-AP
Description  N-channel 450V - 4.1 - 1.5A - IPAK - TO-92 SuperMESH Power MOSFET
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STQ1NC45R-AP Datasheet(HTML) 5 Page - STMicroelectronics

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STD2NC45-1 - STQ1NC45R-AP
Electrical characteristics
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Table 6.
Switching times
Symbol
Parameter
Test condictions
Min.
Typ.
Max. Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 225V, ID = 0.5A
RG =4.7Ω VGS = 10V
(see Figure 17)
6.7
4
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD = 360V, ID = 1.5A,
RG =4.7Ω, VGS = 10V
(see Figure 17)
8.5
12
18
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test condictions
Min
Typ.
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed)
1.5
6.0
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage
ISD = 1.5A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 1.5A, di/dt = 100A/µs
VDD = 100V, Tj = 150°C
(see Figure 22)
225
530
4.7
ns
µC
A



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