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PBL3717A Datasheet(PDF) 4 Page - STMicroelectronics |
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PBL3717A Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 11 page ![]() ELECTRICAL CHARACTERISTICS (refer to the test circuit VS = 36V, VSS = 5V, Tamb =25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit Vs Supply Voltage (pin 3, 14) 10 46 V Vss Logic Supply Voltage (pin 6) 4.75 5.25 V Iss Logic Supply Current (pin 6) 7 15 mA IR Reference Input Current (pin 11) VR = 5V 0.75 1 mA LOGIC INPUTS ViL Input Low Voltage (pins 7, 8, 9) 0.8 V ViH Input High Voltage (pin 7, 8, 9) 2 Vss V IiL Low Voltage Input Current (pins 7, 8, 9) Vi = 0.4V pin 8 pins 7, 9 – 100 – 400 µA µA IiH High Voltage Input Current (pins 7, 8, 9) Vi = 2.4V 10 µA COMPARATORS VCL Comparator Low Threshold Voltage (pin 10) VR =5V Io =L I1 =H 66 78 90 mV VCM Comparator Medium Threshold Voltage (pin 10) VR =5V Io =L I1 =H 236 251 266 mV VCH Comparator High Threshold Voltage (pin 10) VR =5V Io =L I1 =H 396 416 436 mV IC Comparator Input Current (pin 10) ± 20 µA toff Cutoff Time RT = 56k Ω CT = 820pF 25 35 µs td Turn Off Delay (see fig. 2) 2 µs Ioff Output Leakage Current (pins 1, 15) Io =H I1 = H 100 µA SOURCE DIODE-TRANSISTOR PAIR Vsat Saturation Voltage (pins 1, 15) IM = – 0.5A (see fig. 2) Conduction Period Recirculation Period 1.7 1.1 2.1 1.35 V Vsat Saturation Voltage (pins 1, 15) IM = – 1A (see fig. 2) Conduction Period Recirculation Period 2.1 1.7 2.8 2.5 V ILK Leakage Current Vs = 46 V 300 µA VF Diode Forward Voltage IM = – 0.5A IM =– 1A 1 1.3 1.25 1.7 V V ISLK Substrate Leakage Current when Clamped IM = – 0.5A IM =– 1A 2 5 mA mA SINK DIODE-TRANSISTOR PAIR Vsat Saturation Voltage (pins 1, 15) IM = 0.5A IM =1A 1.1 1.6 1.35 2.3 V V ILK Leakage Current Vs = 46V 300 µA VF Diode Forward Voltage IM = 0.5A IM =1A 1.1 1.4 1.5 2 V V PBL3717A 4/11 |
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