 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
IXTY3N50P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
IXTY3N50P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
|
|
1 / 2 page  isc N-Channel MOSFET Transistor IXTY3N50P www.iscsemi.com V2.0 1 FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2Ω(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · AC and DC Motor Drives · High Voltage Pulse Power Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous 3 A IDM Drain Current-Pulsed Pulse Width Limited by TJM 8 A PD Total Dissipation 70 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.79 ℃ /W |
Similar Part No. - IXTY3N50P |
|
Similar Description - IXTY3N50P |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
