isc Silicon NPN Transistor

BUS13A

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS

(TC=25℃ unless otherwise specified)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC = 10mA, IB = 0A

450

--

--

V

ICEO

Collector Cutoff Current

VCE = 450V, IE = 0A

--

--

1.0

mA

IEBO

Emitter Cutoff Current

VEB = 9V, IC = 0A

--

--

10

mA

VCE(sat)

Collector-Emitter Saturation Voltage

IC = 8A, IB = 1.6A

--

--

1.5

V

VBE(sat)

Base-Emitter Saturation Voltage

IC = 8A, IB = 1.6A

--

--

1.6

V

PRODUCT DISCLAIMER

ISC reserves the right to make changes to the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

ISC products are intended for use in general electronic equipment. The products are not designed for

use in equipment which require specialized quality and/or reliability, or in equipment which could have

applications in hazardous environments, the aerospace industry, or the medical field. Please contact us

if you intend our products to be used in these special applications.

ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose.

Nor does ISC assume any liability arising from the application or use of any products, and specifically

disclaims any and all liability, including without limitation special, consequential, or incidental damages.

It is strictly prohibited to reprint or copy part or all of this datasheet without permission from ISC.