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SD1530-08 Datasheet(PDF) 1 Page - STMicroelectronics

Part # SD1530-08
Description  RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
PDF  5 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SD1530-08 Datasheet(HTML) 1 Page - STMicroelectronics

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AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.250 SQ. 2LFL (M1 05 )
hermetically sealed
DESCRIPTION
The SD1530-08 is a gold metallized silicon, NPN
power transistor designed for applications requiring
high peak power and low duty cycles such as
IFF, DME and TACAN. The SD1530-08 is pack-
aged in the .250” input matched hermetic stripline
flange package resulting in improved broadband
performance and a low thermal resistance.
PIN CONNECTION
BRA ND ING
1530-8
ORDER COD E
SD1530-08
ABSOLUTE MAXIMUM RATINGS (Tcase
= 25°C)
Symbol
Parame ter
Value
Unit
VCBO
Collector-Base Voltage
65
V
VCEO
Collector-Emitter Voltage
65
V
VEBO
Emitter-Base Voltage
3.5
V
IC
Device Current
2.6
A
PDISS
Power Dissipation
87.5
W
TJ
Junction Temperature
+200
°C
TSTG
Storage Temperature
− 65 to +150
°C
RTH(j-c)
Junction-Case Thermal Resistance
2.0
°C/W
SD1530-08
1. Collector
3. Emitter
2. Base
THERMAL DATA
August 1993
.
DESIGNED FOR HIGH POWER PULSED
IFF, DME, TACAN APPLICATIONS
.
40 WATTS (typ.) IFF 1030 - 1090 MHz
.
35 WATTS (min.) DME 1025 - 1150 MHz
.
25 WATTS (typ.) TACAN 960 - 1215 MHz
.
9.0 dB MIN. GAIN
.
REFRACTORY GOLD METALLIZATION
.
EMITTER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.
INFINITE LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
.
INPUT MATCHED, COMMON BASE
CONFIGURATION
1/5


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