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ST26025A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ST26025A Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Silicon PNP Darlington Power Transistor ST26025A www.iscsemi.com 1 DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): -3V(Max) @IC= -20A APPLICATIONS · Linear and switching industrial equipment · Automotive fan control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -20 A ICP Collector Current-Pulse,tp＜5ms -40 A IB Base Current -0.5 A PC Total Power Dissipation 160 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.1 ℃ /W |
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