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TPDV640RG Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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TPDV640RG Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() isc Thyristor TPDV640RG www.iscsemi.com 1 FEATURES · Very high commutation capability · High surge current handling APPLICATIONS · Motor starters · Heating systems ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak off-state voltage 600 V IT(RMS) On-state rms current (180° conduction angle),TC=75℃ 40 A ITSM Non repetitive surge peak on-state Current,TJ=25℃ tp=8.3ms 370 A tp=10ms 350 A I2t I2t value for fusing,tp=10ms,TJ=25℃ 610 A2S PG(AV) Average gate power dissipation 1.0 W PGM Peak gate power dissipation,tp=20us 40 W IGM Peak gate current,tp=20us 8 A Tj junction temperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ dV/dt VD=2/3VDRM Gate Open,TJ =125℃ 500 V/us di/dt Critical rate of rise of on-state current, IG = 500 mA; dlG/dt =1A/µs Repetitive F= 50 Hz 20 A/us Non repetitive 100 A/us |
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