RSS050P03

Transistors

Rev.B

2/4

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

IGSS

Yfs

Min.

Typ.

Max.

Unit

Conditions

V(BR) DSS

IDSS

VGS (th)

RDS (on)

Ciss

Coss

Crss

td (on)

tr

td (off)

tf

Qg

Qgs

Qgd

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

−−

±10

µAVGS= −20V, VDS=0V

VDD

−15V

−30

−−

VID

= −1mA, VGS=0V

−−

−1

µAVDS= −30V, VGS=0V

−1.0

−−2.5

V

VDS

= −10V, ID= −1mA

−

30

42

ID

= −5.0A, VGS= −10V

−

47

65

m

Ω

m

Ω

m

Ω

ID

= −2.5A, VGS= −4.5V

−

55

77

ID

= −2.5A, VGS= −4.0V

5.0

−−

SVDS

= −10V, ID= −2.5A

−

1200

−

pF

VDS

= −10V

−

250

180

−

pF

VGS

=0V

−

12

−

pF

f

=1MHz

−

25

−

ns

−

70

−

ns

−

35

−

ns

−

13

−

ns

−

2.8

−

nC

−

5.0

−

nC

VGS

= −5V

−−

nC

ID

= −5.0A

VDD

−15V

ID

= −2.5A

VGS

= −10V

RL

=6Ω

RG

=10Ω

∗Pulsed

∗

∗

∗

∗

∗

∗

∗

∗

∗

Body diode characteristics (Source-drain) (Ta=25

°C)

VSD

−−

−1.2

V

Forward voltage

IS

= −1.6A, VGS=0V

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions