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SMBYW01-200 Datasheet(PDF) 4 Page - STMicroelectronics

Part # SMBYW01-200
Description  HIGH EFFICIENCY FAST RECOVERY DIODE
PDF  5 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SMBYW01-200 Datasheet(HTML) 4 Page - STMicroelectronics

  SMBYW01-200 Datasheet HTML 1Page - STMicroelectronics SMBYW01-200 Datasheet HTML 2Page - STMicroelectronics SMBYW01-200 Datasheet HTML 3Page - STMicroelectronics SMBYW01-200 Datasheet HTML 4Page - STMicroelectronics SMBYW01-200 Datasheet HTML 5Page - STMicroelectronics  
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200
0
2
4
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8
10
12
VR(V)
C(pF)
F=1MHz
Tj=25°C
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values).
0
20
40
60
80
100 120 140 160 180 200
0
1
2
3
4
5
6
dIF/dt(A/µs)
IRM(A)
IF=IF(av)
90% confidence
Tj=125°C
Fig. 8: Reverse recovery current versus dIF/dt .
0
20
40
60
80
100 120 140 160 180 200
0
10
20
30
40
50
60
70
80
90
100
trr(ns)
IF=IF(av)
90% confidence
Tj=125°C
dIF/dt(A/µs)
Fig. 9: Reverse recovery time versus dIF/dt.
0
20
40
60
80
100 120 140 160 180 200
0
10
20
30
40
50
60
70
80
90
100
Qrr(nC)
IF=IF(av)
90% confidence
Tj=125°C
dIF/dt(A/µs)
Fig. 10: Reverse recovery charges versus dIF/dt.
0
25
50
75
100
125
150
0.25
0.50
0.75
1.00
1.25
Tj(°C)
Qrr;IRM[Tj] / Qrr;IRM[Tj=125°C]
IRM
Qrr
Fig. 11: Dynamic parameters versus junction
temperature.
0
1234
5
0
20
40
60
80
100
120
S(Cu) (cm²)
Rth(j-a) (°C/W)
Fig. 12: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness: 35
µm)
SMBYW01-200
4/5



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