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HMC788ACPSZ-EP-R7 Datasheet(PDF) 4 Page - Analog Devices

Part # HMC788ACPSZ-EP-R7
Description  0.01 GHz to 10 GHz, MMIC, GaAs, pHEMT RF Gain Block
PDF  8 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

HMC788ACPSZ-EP-R7 Datasheet(HTML) 4 Page - Analog Devices

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HMC788A-EP
Enhanced Product
Rev. B | Page 4 of 8
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Rating
VCC
7 V
RFIN (VCC = 5 V)
20 dBm
Continuous Power Dissipation, PDISS1
TCASE = 85°C
0.76 W
TCASE = 105°C
0.59 W
Junction (TJ) Temperature
175°C
Operating (TOPR) Temperature Range
−55°C to +105°C
Storage Temperature Range
−65°C to +150°C
Electrostatic Discharge (ESD) Sensitivity,
Human Body Model (HBM)
Class 1A
1
For maximum power dissipation vs. case temperature, see Figure 2.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
θJC is the junction to case thermal resistance.
Table 3. Thermal Resistance
Package Type
θJC
Unit
CP-6-101
118.0
°C/W
1
Thermal impedance simulated values are based on a JEDEC 2S2P thermal
test board with nine thermal vias. See JEDEC JESD51.
POWER DERATING CURVES
Figure 2 shows the maximum power dissipation vs. case
temperature.
CASE TEMPERATURE (°C)
0
0.125
0.250
0.375
0.500
0.625
0.750
0.875
1.000
–60
–40
–20
0
20
40
60
80
100
120
Figure 2. Maximum Power Dissipation vs. Case Temperature
ESD CAUTION



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