Nexperia

PESD4USB3UBTTS-Q

Extremely low capacitance unidirectional ESD protection diode array

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VRWM

reverse standoff voltage

-

3.3

V

IPPM

rated peak pulse current tp = 8/20 µs

[1]

-6.5

6.5

A

Tstg

storage temperature

-65

150

°C

Tamb

ambient temperature

-55

150

°C

ESD maximum ratings

IEC 61000-4-2; contact discharge

[2]

-15

15

kV

ISO 10605; contact discharge; R = 330 Ω;

C = 150 pF

[2]

-15

15

kV

VESD

electrostatic discharge

voltage

ISO 10605; contact discharge; R = 330 Ω;

C = 330 pF

[2]

-13

13

kV

[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC 61000-4-5.

[2] Device stressed with ten non-repetitive ESD pulses.

t (µs)

0

40

30

10

20

001aaa630

40

80

120

IPP

(%)

0

e-t

100 % IPP; 8 µs

50 % IPP; 20 µs

Fig. 1. 8/20 µs pulse waveform according to

IEC 61000-4-5

001aaa631

IPP

100 %

90 %

t

30 ns

60 ns

10 %

tr = 0.6 ns to 1 ns

Fig. 2. ESD pulse waveform according to

IEC 61000-4-2

PESD4USB3UBTTS-Q

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2023. All rights reserved

Product data sheet

25 October 2023

3 / 11