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STE180NE10 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STE180NE10
Description  N-channel 100V - 4.5m廓 - 180A - ISOTOP STripFET??Power MOSFET
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STE180NE10 Datasheet(HTML) 3 Page - STMicroelectronics

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STE180NE10
Electrical ratings
3/12
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
100
V
VDGR
Drain-gate voltage (RGS = 20kΩ)100
V
VGS
Gate-source voltage
± 20
V
ID
Drain current (continuous) at TC = 25°C
180
A
ID
Drain current (continuous) at
TC = 100°C
119
A
IDM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
360
A
PTOT
Total dissipation at TC = 25°C
360
W
Derating factor
2.88
W/°C
VISO
Insulation withstand voltage (AC-RMS)
2500
V
Tj
Tstg
Operating junction temperature
storage temperature
-55 to 150
°C
Table 2.
Thermal data
Rthj-case
Thermal resistance junction-case max
0.37
°C/W
Table 3.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAR
Avalanche Current, Repetitive or Not-
Repetitive
(pulse width limited by Tj max)
60
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR,
VDD = 25 V)
720
mJ



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