ST662ACD datasheet(6/12 Pages) STMICROELECTRONICS

6 / 12 page

APPLICATION CIRCUIT

Based on fast charge/discharge of capacitors,

this circuit involves high di/dt values limited only

by Ron of switches. This implies a critical layout

design due to the need to minimize inductive

paths and place capacitors as close as possible

to the device.

A good layout design is strongly recommended

for noise reason. For best performance, use very

short connections to the capacitors and the

values shown in table 1.

C3 and C4 must have low ESR in order to

minimize the output ripple. Their values can be

reduced to 2

µF and 1µF, respectively, when

using ceramic capacitors, but must be of 10

µFor

larger if aluminium electrolytic are chosen.

C5 must be placed as close to the device as

possible and could be omitted if very low output

noise performance are not required.

Fig

and

Fig

show,

respectively, our

EVALUATION

kit

layout

and

the

relatively

electrical shematic.

Table 1: List of Components

CAPACITOR

TYPE

VALUE (

µF)

Charge Pump C1

Ceramic

0.22

Charge Pump C2

Ceramic

0.22

Input C3

Electrolyt ic Tant alum

4. 7

O utput C4

Electrolyt ic Tant alum

4. 7

Decoupling C5

Ceramic

0. 1

Figure 5: Electrical Schematic

Figure 4: KIT Lay-out

ST662A

6/12

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