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SIM100D06AV1 Datasheet(PDF) 2 Page - SemiWell Semiconductor

Part # SIM100D06AV1
Description  ?쏦ALF-BRIDGE??IGBT MODULE
PDF  4 Pages
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Manufacturer  SEMIWELL [SemiWell Semiconductor]
Direct Link  http://www.semiwellsemi.co.kr
Logo SEMIWELL - SemiWell Semiconductor

SIM100D06AV1 Datasheet(HTML) 2 Page - SemiWell Semiconductor

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SIM100D06AV1
Preliminary
Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25℃ (unless otherwise specified)
Parameters
Min
Typ
Max
Unit
Test conditions
Ciss
Input capacitance
ㅡ
6100
ㅡ
pF
VCE = 25V , VGE = 0V
f = 1 MHz
Coss
Output capacitance
ㅡ
390
ㅡ
Crss
Reverse transfer capacitance
ㅡ
190
ㅡ
td(on)
Turn-on delay time
ㅡ
70
ㅡ
ns
Inductive Switching (125℃)
VCC = 300V
IC = 100A
, VGE =±15V
RG = 3.3Ω
tr
Rise time
ㅡ
25
ㅡ
td(off)
Turn-off delay time
ㅡ
260
ㅡ
tf
Fall time
ㅡ
60
ㅡ
VRRM
Maximum Peak Repetitive Reverse Voltage
600
ㅡ
ㅡ
V
IRM
Maximum Reverse leakage current
ㅡ
ㅡ
250
㎂
VR = 600V
trr
Reverse Recovery Time
ㅡ
125
ㅡ
ns
IF = 100A, VR = 300V
di / dt = 2000A /㎲
Qrr
Reverse Recovery Charge
ㅡ
4.7
ㅡ
µC
Thermal Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
RΘJC
Junction-to-Case (IGBT Part, Per 1/2 Module)
-
-
0.44
℃
/W
RΘJC
Junction-to-Case (Diode Part, Per 1/2 Module)
-
-
0.77
RΘCS
Case-to-Heat Sink (Conductive grease applied)
-
0.05
-
※ Data and specifications subject to change without notice.



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