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SIM200D06AV1 Datasheet(PDF) 2 Page - SemiWell Semiconductor

Part # SIM200D06AV1
Description  ?쏦ALF-BRIDGE??IGBT
PDF  4 Pages
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Manufacturer  SEMIWELL [SemiWell Semiconductor]
Direct Link  http://www.semiwellsemi.co.kr
Logo SEMIWELL - SemiWell Semiconductor

SIM200D06AV1 Datasheet(HTML) 2 Page - SemiWell Semiconductor

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SIM200D06AV1
Preliminary
Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25℃ (unless otherwise specified)
Parameters
Min
Typ
Max
Unit
Test conditions
Ciss
Input capacitance
ㅡ
9200
ㅡ
pF
VCE = 25V
, VGE = 0V
f = 1 MHz
Coss
Output capacitance
ㅡ
580
ㅡ
Crss
Reverse transfer capacitance
ㅡ
270
ㅡ
td(on)
Turn-on delay time
ㅡ
145
ㅡ
ns
Inductive Switching (125℃)
VCC = 300V
IC = 200A, VGE = ±15V
RG = 2Ω
tr
Rise time
ㅡ
30
ㅡ
td(off)
Turn-off delay time
ㅡ
340
ㅡ
tf
Fall time
ㅡ
60
ㅡ
VBR
Cathode-Anode breakdown Voltage
600
ㅡ
ㅡ
V
IRM
Maximum Reverse Leakage Current
ㅡ
ㅡ
250
㎂
VR = 600V
trr
Reverse Recovery Time
ㅡ
130
ㅡ
ns
IF = 200A, VR = 300V
di / dt = 2200A / ㎲
Qrr
Reverse Recovery Charge
ㅡ
9
ㅡ
µC
Thermal Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
RΘJC
Junction-to-Case (IGBT Part, Per 1/2 Module)
-
-
0.24
℃
/W
RΘJC
Junction-to-Case (Diode Part, Per 1/2 Module)
-
-
0.4
RΘCS
Case-to-Heat Sink (Conductive grease applied)
-
0.05
-
※ Data and specifications subject to change without notice.



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