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SIM200D06AV2 Datasheet(PDF) 1 Page - SemiWell Semiconductor |
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SIM200D06AV2 Datasheet(HTML) 1 Page - SemiWell Semiconductor |
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1 / 4 page  - 1 - SIM200D06AV2 Preliminary Feature ▪ Smart field stopper +Trench design technology ▪ Low VCE (sat) ▪ Low Turn-off losses ▪ Short tail current for over 20KHz Applications ▪ Motor controls ▪ VVVF inverters ▪ Inverter-type welding MC over 18KHZ ▪ SMPS, Electrolysis ▪ UPS/EPS, Robotics PKG: V2=48mm “HALF-BRIDGE” IGBT Absolute Maximum Ratings @ Tj=25℃ (Per Leg) Symbol Parameter Condition Ratings Unit VCES Collector-to-Emitter Voltage TC = 25℃ 600 V VGE Gate emitter voltage ± 20 V IC Continuous Collector Current TC = 80℃ (25℃) 200 (290) A ICP Pulsed collector current TC = 25℃ 450 A IF Diode Continuous Forward Current TC = 80℃ (25℃) 200 (290) A IFM Diode Maximum Forward Current TC = 25℃ 400 A tp Short circuit test, VGE = 15V, VCC = 360V TC = 150℃ (25℃) 6 (8) ㎲ Viso Isolation Voltage test AC @ 1 minute 2500 V Weight Weight of Module 190 g Tj Junction Temperature -40 ~ 150 ℃ Tstg Storage Temperature -40 ~ 125 ℃ Md Mounting torque with screw : M5 2.0 N.m Terminal connection torque : M5 2.0 N.m Static Characteristics @ Tj = 25℃ (unless otherwise specified) Parameters Min Typ Max Unit Test conditions VCE(ON) Collector-to-Emitter Saturation Voltage 1.60 1.95 V IC = 200A, VGE = 15V VGE(th) Gate Threshold Voltage 5.8 6.5 VCE = VGE, IC = 4㎃ ICES Zero Gate Voltage Collector Current ㅡ ㅡ 5.0 ㎃ VGE= 0V, VCE = 600V IGES Gate-to-Emitter Leakage Current ㅡ ㅡ 400 ㎁ VCE = 0V, VGE = 20V VF Forward voltage drop 1.6 1.9 V IF = 200A RGINT Integrated gate resistor ㅡ 2 ㅡ Ω VCES = 600V Ic= 200A VCE(ON) typ. = 1.6V @Ic= 200A |
Similar Part No. - SIM200D06AV2 |
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Similar Description - SIM200D06AV2 |
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