STB36NF03L datasheet(1/6 Pages) STMICROELECTRONICS

Part #	STB36NF03L

Description	N-CHANNEL 30V - 0.015 ohm - 36A D2PAK LOW GATE CHARGE STripFET POWER MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STB36NF03L

N-CHANNEL 30V - 0.015

Ω - 36A D2PAK

LOW GATE CHARGE STripFET

™ POWER MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.015

Ω

s

TYPICAL Qg = 18 nC @ 10V

s

OPTIMAL RDS(on) xQg TRADE-OFF

s

CONDUCTION LOSSES REDUCED

s

SWITCHING LOSSES REDUCED

DESCRIPTION

This application specific Power Mosfet is the third

generation of STMicroelectronics unique ”Single

Feature Size

™” strip-based process. The resul-

ting transistor shows the best trade-off between

on-resistance and gate charge. When used as

high and low side in buck regulators, it gives the

best performance in terms of both conduction and

switching losses. This is extremely important for

motherboards where fast switching and high effi-

ciency are of paramount importance.

APPLICATIONS

s

SPECIFICALLY DESIGNED AND

OPTIMISED FOR HIGH EFFICIENCY CPU

CORE DC/DC CONVERTERS

®

INTERNAL SCHEMATIC DIAGRAM

May 2000

1

3

D

2PAK

TO-263

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS =0)

30

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)30

V

VGS

G ate-source Volt age

± 20

V

ID

Drain Current (continuous) at Tc =25

oC36

A

ID

Drain Current (continuous) at Tc =100

oC25

A

IDM (

•)

Drain Current (pulsed)

144

A

Ptot

T otal Dissipat ion at Tc =25

oC75

W

Derating Factor

0.5

W /

o C

Tstg

Storage Temperature

-65 to 175

o C

Tj

Max. Operating Junction Temperature

175

o C

(

•) Pulse width limited by safe operating area

T YPE

VDSS

RDS(on)

ID

STB36NF03L

30 V

< 0. 02

Ω

36 A

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