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STB45N10L Datasheet(PDF) 1 Page - STMicroelectronics

Part # STB45N10L
Description  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF  6 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB45N10L Datasheet(HTML) 1 Page - STMicroelectronics

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STB45N10L
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMINARY DATA
s
TYPICAL RDS(on) = 0.028
Ω
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
oC
s
LOW INPUT CAPACITANCE
s
LOW GATE CHARGE
s
LOW LEAKAGE CURRENT
s
APPLICATION ORIENTED
CHARACTERIZATION
s
THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX "-1")
s
SURFACE-MOUNTING D2PACK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX "T4")
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLY (SMPS)
s
CONSUMER AND INDUSTRIAL LIGHTING
s
DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY (UPS)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain- gate Voltage (RGS = 20 k
Ω)
100
V
VGS
Gate-source Voltage
± 15
V
ID
Drain Current (continuous) at Tc = 25
oC45
A
ID
Drain Current (continuous) at Tc = 100
o C32
A
IDM(
•)
Drain Current (pulsed)
180
A
Ptot
Total Dissipation at Tc = 25
o C
150
W
Derating Factor
1
W/
oC
Tstg
Storage Temperature
-65 to 175
oC
Tj
Max. Operating Junction Temperature
175
oC
(
•) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STB45N10L
100 V
< 0.036
Ω
45 A
March 1996
1
2
3
1
3
I2PAK
TO-262
D2PAK
TO-263
1/6


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