STB50NH02L datasheet(3/11 Pages) STMICROELECTRONICS

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STB50NH02L

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

(1) Garanted when external Rg=4.7

Ω and tf < tfmax.

(4) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(2) Pulse width limited by safe operating area

(5) Qoss = Coss*

∆ Vin , Coss = Cgd + Cds . See Appendix A

(3) Starting Tj = 25 oC, ID = 25A, VDD = 18V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

Rise Time

VDD = 10 V

ID =25 A

RG = 4.7 Ω

VGS = 4.5 V

(Resistive Load, Figure 3)

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

0.44

≤ VDD ≤10 V

ID=50 A VGS=10 V

2.5

Qoss(5)

Output Charge

VDS= 16 V

VGS= 0 V

6.5

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(off)

Turn-off Delay Time

Fall Time

VDD = 10 V

ID = 25 A

RG = 4.7Ω,

VGS = 10 V

(Resistive Load, Figure 3)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

Source-drain Current

Source-drain Current (pulsed)

200

VSD (4)

Forward On Voltage

ISD = 25 A

VGS = 0

1.3

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 50 A

di/dt = 100A/µs

VDD = 18 V

Tj = 150°C

(see test circuit, Figure 5)

1.6

ELECTRICAL CHARACTERISTICS (continued)

Safe Operating Area

Thermal Impedance

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