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STB60NF06 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STB60NF06
Description  N-CHANNEL 60V - 0.014ohm - 60A D2PAK STripFET™ POWER MOSFET
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB60NF06 Datasheet(HTML) 1 Page - STMicroelectronics

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February 2001
STB60NF06
N-CHANNEL 60V - 0.014
Ω - 60A D2PAK
STripFET™ POWER MOSFET
(1) ISD≤ 60A, di/dt≤400 A/µs, VDD≤ 24V, Tj≤TjMAX
s
TYPICAL RDS(on) = 0.014Ω
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
APPLICATION ORIENTED
CHARACTERIZATION
s
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
s
AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
(q) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STB60NF06
60V
< 0.016
Ω
60A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
60
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
60
V
VGS
Gate- source Voltage
± 20
V
ID
Drain Current (continuos) at TC = 25°C
60
A
ID
Drain Current (continuos) at TC = 100°C
42
A
IDM (q)
Drain Current (pulsed)
240
A
PTOT
Total Dissipation at TC = 25°C
110
W
Derating Factor
0.73
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
4
V/ns
Tstg
Storage Temperature
–65 to 175
°C
Tj
Max. Operating Junction Temperature
175
°C
D2PAK
1
3
INTERNAL SCHEMATIC DIAGRAM


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