STB70NFS03L datasheet(1/6 Pages) STMICROELECTRONICS

Part #	STB70NFS03L

Description	N - CHANNEL 30V - 0.008ohm - 70A D2PAK STripFET MOSFET PLUS SCHOTTKY RECTIFIER

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STB70NFS03L

N - CHANNEL 30V - 0.008

Ω - 70A D2PAK

STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER

PRELIMINARY DATA

DESCRIPTION:

This product associates a Power MOSFET of the

third

generation

of

ST Microelect ronics

unique

”Single Feature Size” strip-based process and a

low drop Schottky diode. The t ransistor shows t he

best

t rade-of f

between

on-resist ance

and gate

charge. Used as low side in buck regulat ors, the

product is the best solution in terms of conduction

losses and space saving.

®

INTERNAL SCHEMATIC DIAGRAM

April 2000

MOSFET ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Valu e

Uni t

VDS

Drain-source Voltage (VGS =0)

30

V

VDGR

Drain- gat e Voltage (RGS =20 k

Ω)30

V

VGS

Gat e-source Voltage

± 22

V

ID

Drain Current (continuous) at Tc =25

oC70

A

ID

Drain Current (continuous) at Tc = 100

oC50

A

IDM(

•)

Drain Current (pulsed)

280

A

Ptot

Tot al Dissipation at Tc =25

oC

100

W

Derating Factor

0.67

W/

oC

Tstg

Storage Temperature

-65 to 175

oC

T j

Max. Operating Junct ion Temperat ure

175

oC

(

•) Pulse width limited by safe operating area

MAIN PRODUCT CHARACTERISTICS

MOSFET

VDSS

RDS(on )

ID

30V

<0.01

Ω

70A

SCHOTTKY

IF(AV)

VRRM

VF(MAX)

3A

30V

0.51V

1

3

D

2PAK

TO-263

(suffix ”T4”)

SCHOTTKY ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Valu e

Un it

VRRM

Repetitive Peak Reverse Voltage

30

V

IF(RMS)

RMS F orward Current

20

A

IF (AV)

Average F orward Current

TL=125

oC

δ =0.5

3A

IFSM

Surge Non Repetit ive F orward Current

tp= 10 ms

Sinusoidal

75

A

dv/dt

Critical Rate Of Rise O f Reverse Voltage

10000

V/

µs

1/6

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