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STB7NB60 Datasheet(PDF) 1 Page - STMicroelectronics |
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STB7NB60 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 9 page  STB7NB60 N - CHANNEL 600V - 1.0 OMH - 7.2A - I 2PAK/D2PAK PowerMESH ™ MOSFET s TYPICAL RDS(on) = 1.0 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ® INTERNAL SCHEMATIC DIAGRAM June 1998 1 2 3 I 2PAK TO-262 (suffix ”-1”) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t VDS Drain-source Volt age (VGS =0) 600 V VDGR Drain- gate Voltage (RGS =20 k Ω) 600 V VGS Gat e-source Voltage ± 30 V ID Drain Current (continuous) at Tc =25 o C7.2 A ID Drain Current (continuous) at Tc =100 oC4.5 A IDM( •) Drain Current (pulsed) 28.8 A Ptot Tot al Dissipation at Tc =25 oC125 W Derating F act or 1.0 W/ oC dv/dt(1) Peak Diode Recovery voltage slope 4.5 V/ ns Tstg Storage T emperat ure -65 to 150 oC Tj Max. O perating Junction Temperature 150 oC ( •) Pulse width limited by safe operating area (1)ISD ≤ 7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX TYPE VDSS RDS(on) ID STB7NB60 600 V < 1.2 Ω 7.2 A 1 3 D 2PAK TO-252 (Suffix ”T4”) 1/8 |
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