2STD1665T4 datasheet(4/11 Pages) STMICROELECTRONICS

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Electrical characteristics

2STD1665

4/11

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = 120 V

TC = 100 °C

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 7 V

V(BR)CBO

(1)

Pulsed duration = 300 µs, duty cycle

≤1.5%.

Collector-base

breakdown voltage

(IE = 0)

IC = 100 µA

150

V(BR)CEO

(1)

Collector-emitter

breakdown voltage

(IB = 0)

IC = 10 mA

V(BR)EBO

(1)

Emitter-base

breakdown voltage

(IC = 0)

IE = 100 µA

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 100 mA

IB = 5 mA

IC = 1 A

IB = 50 mA

IC = 2 A

IB = 50 mA

IC = 6 A

IB = 150 mA

IC = 6 A

IB = 300 mA

100

260

230

120

200

600

380

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 4 A

IB = 200 mA

11.15

VBE(on)

(1)

Base-emitter On

voltage

IC = 4 A

VCE = 1 V

0.85

hFE

DC current gain

IC = 10 mA

VCE = 1 V

IC = 2 A

VCE = 1 V

IC = 5 A

VCE = 1 V

IC = 10 A

VCE = 1 V

150

320

310

175

350

CCBO

Collector-base

capacitance

VCB = 10 V

f = 1 MHz

tON

Resistive load

Turn-on time

Storage time

Fall time

IC = 3 A

VCC = 10 V

IB1 = -IB2 = 0.3 A

800

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