PT60QH045 datasheet(2/6 Pages) DYNEX

2 / 6 page

PT60QHx45

2/6

Clamping force 19.5kN

with mounting compound

Thermal resistance - case to heatsink

th(c-h)

0.003

Double side

oC/W

SURGE RATINGS

Conditions

10ms half sine; T

case = 125

R = 50% VRRM - 1/4 sine

10ms half sine; T

case = 125

R = 0

Max.

Units

Symbol

Parameter

TSM

Surge (non-repetitive) on-state current

2tI2t for fusing

TSM

Surge (non-repetitive) on-state current

2t for fusing

2.52 x 10

22.5

15.8 x 106

A2s

17.8

THERMAL AND MECHANICAL DATA

Conditions

Min.

Max.

Units

125

Virtual junction temperature

stg

Storage temperature range

Reverse (blocking)

Thermal resistance - junction to case

th(j-c)

Symbol

Parameter

Clamping force

–55

125

On-state (conducting)

135

Double side cooled

0.013

oC/W

DYNAMIC CHARACTERISTICS

Parameter

Symbol

Conditions

Typ.

Max.

Units

RRM/IDRM

Peak reverse and off-state current

At V

RRM/VDRM, Tcase = 125

From 67% V

DRM

to 40kA

Gate source 60A

r = 1.5µs to 1A, Tj = 25

dV/dt

Maximum linear rate of rise of off-state voltage

To 67% V

DRM Tj = 125

oC. R

gk ≤ 1.5Ω

100

175

µs

Non-repetitive

10000

µs

Rate of rise of on-state current

dI/dt

T(TO)

Threshold voltage

At T

vj = 125

On-state slope resistance

At T

vj = 125

1.5

-V

0.67

Ω

GATE TRIGGER CHARACTERISTICS AND RATINGS

DRM = 5V,

case = 25

Conditions

Parameter

Symbol

Gate trigger voltage

DRM = 5V, Tcase = 25

Gate trigger current

1.0

Max.

Units

Typ.

PT60QH045 Datasheet(PDF) 2 Page - Dynex Semiconductor

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