STD1NB60 datasheet(1/6 Pages) STMICROELECTRONICS

Part #	STD1NB60

Description	N - CHANNEL 600V - 7.4ohm - 1A - IPAK/DPAK PowerMESH MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

1 / 6 page

STD1NB60

N - CHANNEL 600V - 7.4

Ω - 1A - IPAK/DPAK

PowerMESH

™ MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 7.4

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced

family

of

power

MOSFETs

with

outstanding

performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

INTERNAL SCHEMATIC DIAGRAM

November 1999

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

600

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

600

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc = 25

oC1

A

ID

Drain Current (continuous) at Tc = 100

oC

0.63

A

IDM(

•)

Drain Current (pulsed)

4

A

Ptot

Total Dissipation at Tc = 25

o C45

W

Derating Factor

0.36

W/

o C

dv/dt(1)

Peak Diode Recovery voltage slope

3.5

V/ns

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

(1) ISD

≤1 Α, di/dt â 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STD1NB60

600 V

< 8.5

Ω

1 A

3

2

1

IPAK

TO-251

(Suffix "-1")

1

3

DPAK

TO-252

(Suffix "T4")

®

1/6

Similar Part No. - STD1NB60

Manufacturer	Part #	Datasheet	Description
VBsemi Electronics Co.,...	STD1NB60	1Mb / 9P	N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,...	STD1NB60T4	1Mb / 9P	N-Channel 650 V (D-S) MOSFET

More results

Similar Description - STD1NB60

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	STD1HNC60	268Kb / 9P	N-CHANNEL 600V - 4ohm - 2A - IPAK/DPAK PowerMesh™ I MOSFET Feb-2001
	STD1LNC60	274Kb / 9P	N-CHANNEL 600V - 12ohm - 1A - IPAK/DPAK PowerMESH™ I MOSFET Feb-2001
	STD1NB80-	56Kb / 5P	N - CHANNEL 800V - 16ohm - 1A - IPAK PowerMESH MOSFET Sep-1998
	STD1NB80	66Kb / 6P	N - CHANNEL 800V - 16ohm - 1A - DPAK/IPAK PowerMESH MOSFET
	STD1NC60	280Kb / 9P	N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK PowerMesh™ I MOSFET Dec-2000
	STD2NB40	66Kb / 6P	N - CHANNEL 400V - 3.5ohm - 2A - IPAK/DPAK PowerMESH MOSFET Jul-1999
	STD2NB50	451Kb / 10P	N-CHANNEL 500V - 5ohm - 1A DPAK / IPAK PowerMesh™ MOSFET Sep-2001
	STD2NC60	283Kb / 9P	N-CHANNEL 600V - 3.3ohm - 2A DPAK / IPAK PowerMesh™ II MOSFET Jan-2001
	STD3NC60	460Kb / 10P	N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMesh™ I MOSFET Aug-2002
	STD4NB40	449Kb / 10P	N-CHANNEL 400V - 1.47ohm - 4A DPAK/IPAK PowerMESH™ MOSFET Jun-2001

More results

STD1NB60 Datasheet(PDF) 1 Page - STMicroelectronics

STD1NB60 Datasheet(HTML) 1 Page - STMicroelectronics

Similar Part No. - STD1NB60

Similar Description - STD1NB60

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL