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STD1NB80 Datasheet(PDF) 1 Page - STMicroelectronics |
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STD1NB80 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 6 page  STD1NB80 N - CHANNEL 800V - 16 Ω - 1A - DPAK/IPAK PowerMESH ™ MOSFET PRELIMINARY DATA s TYPICAL RDS(on) = 16 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED s ADD SUFFIX "T4" FOR ORDERING IN TAPE&REEL DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s AC ADAPTORS AND BATTERY CHARGERS FOR HANDHELD EQUIPMENT INTERNAL SCHEMATIC DIAGRAM May 1999 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 800 V VDGR Drain- gate Voltage (RGS = 20 k Ω) 800 V VGS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc = 25 oC1 A ID Drain Current (continuous) at Tc = 100 oC 0.63 A IDM( •) Drain Current (pulsed) 4 A Ptot Total Dissipation at Tc = 25 o C50 W Derating Factor 0.4 W/ o C dv/dt(1) Peak Diode Recovery voltage slope 4.5 V/ns Tstg Storage Temperature -65 to 150 o C Tj Max. Operating Junction Temperature 150 o C ( •) Pulse width limited by safe operating area (1) ISD ≤ 1Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX TYPE VDSS RDS(on) ID STD1NB80 800 V < 20 Ω 1 A 1 3 DPAK TO-252 (Suffix "T4") 3 2 1 IPAK TO-251 (Suffix "-1") 1/6 |
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Similar Description - STD1NB80 |
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