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PRELIMINARY DATA

May 2002

STD30PF03L

STD30PF03L-1

P-CHANNEL 30V - 0.025

Ω - 24A DPAK/IPAK

STripFET™ II POWER MOSFET

Note:For the P-CHANNEL MOSFET actual polarity of voltages and

current has to be reversed

s

s

STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

s

LOW THRESHOLD DRIVE

s

LOW GATE CHARGE

s

EXTREMELY LOW FIGURE OF MERIT

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics

unique

“Single

Feature

Size™” strip-based process. The resulting transis-

tor shows extremely high packing density for low

on-resistance and low gate charge.

APPLICATIONS

s

DC-DC CONVERTERS

ABSOLUTE MAXIMUM RATINGS

(#) Current limited by wire bonding

TYPE

STD30PF03L

STD30PF03L-1

30 V

30 V

< 0.028

Ω

< 0.028

Ω

24 A

24 A

Symbol

Parameter

Value

Unit

30

V

30

V

Gate- source Voltage

± 16

V

24

A

24

A

Drain Current (pulsed)

96

A

70

W

Derating Factor

0.47

W/°C

Storage Temperature

– 55 to 175

°C

Max. Operating Junction Temperature

175

°C

DPAK

1

3

3

2

1

IPAK

INTERNAL SCHEMATIC DIAGRAM