STD5NM60 datasheet(2/6 Pages) STMICROELECTRONICS

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STD5NM60

2/6

THERMAL DATA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TCASE = 25

°C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

Note: 1. Pulsed: Pulse duration = 300

µs, duty cycle 1.5 %.

Rthj-case

Thermal Resistance Junction-case Max

2.5

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Rthc-sink

Thermal Resistance Case-sink Typ

0.5

°C/W

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj =25 °C, ID =IAR,VDD =50 V)

400

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS =0

600

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS = Max Rating

µA

VDS = Max Rating, TC = 125 °C

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ±30V

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID = 250µA

45V

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID = 2.5A

0.8

0.9

Ω

ID(on)

On State Drain Current

VDS >ID(on) xRDS(on)max,

VGS =10V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS >ID(on) xRDS(on)max,

ID = 2.5A

2.4

Ciss

Input Capacitance

VDS = 25V, f = 1 MHz, VGS =0

412

Coss

Output Capacitance

Crss

Reverse Transfer

Capacitance

Gate Input Resistance

f=1 MHz Gate DC Bias = 0

Test Signal Level = 20mV

Open Drain

Ω

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