STE110NA20 datasheet(2/8 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-ca se

Rthc -h

Thermal Resistance Junction-case

Max

Thermal Resistance Case-heats ink With Conductive

Grease Applied

Max

0.27

0.05

oC/W

AVALANCHE CHARACTERISTICS

Symb ol

Parameter

Max Valu e

Uni t

IAR

Avalanche Current , Repet itive or Not -Repetitive

(pulse widt h limited by Tj max,

δ <1%)

EAS

Single Pulse Avalanche Energy

(starting Tj =25

oC, ID =IAR,VDD =50 V)

500

EAR

Repetit ive Avalanche Energy

(pulse widt h limited by Tj max,

δ <1%)

175

IAR

Avalanche Current , Repet itive or Not -Repetitive

(Tc =100

oC, pulse width limited by Tj max,

δ <1%)

32.5

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

V(BR)DSS

Drain-source

Breakdown Volt age

ID =1 mA

VGS = 0

200

IDSS

Zero Gat e Voltage

Drain Current (VGS =0)

VDS =Max Rating

VDS =Max Rating x0. 8

Tc = 125

400

200

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS =

± 30 V

± 400

ON (

∗)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

VGS(th)

Gate T hreshold Voltage VDS =VGS

ID =1 mA

2.25

3.75

RDS(on)

St atic Drain-source On

Resistance

VGS = 10V

ID =55 A

VGS = 10V

ID =55 A

Tc =100

0.015

0. 019

Ω

ID(o n)

On Stat e Drain Current

VDS >ID(on) xRDS(on) max

VGS =10 V

110

DYNAMIC

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

gfs (

∗)Forward

Transconductance

VDS =15 V

ID =55 A

Ciss

Coss

Crss

Input Capacitance

Output Capacit ance

Reverse Transfer

Capacitance

VDS = 25V

f = 1MHz

VGS = 0

12. 9

2870

980

STE110NA20

2/8

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