STE53NC50 datasheet(3/8 Pages) STMICROELECTRONICS

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STE53NC50

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

VDD = 250V, ID = 26.5A

RG = 4.7Ω VGS = 10V

(see test circuit, Figure 3)

Rise Time

Total Gate Charge

VDD = 400V, ID = 53A,

VGS = 10V

310

434

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

150

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

Off-voltage Rise Time

VDD = 400V, ID = 53A,

RG = 4.7Ω, VGS = 10V

(see test circuit, Figure 5)

Fall Time

Cross-over Time

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

ISDM (2)

Source-drain Current (pulsed)

212

VSD (1)

Forward On Voltage

ISD = 53A, VGS = 0

1.6

trr

Reverse Recovery Time

ISD = 53A, di/dt = 100A/µs,

VDD = 70V, Tj = 150°C

(see test circuit, Figure 5)

760

Qrr

Reverse Recovery Charge

17.86

µC

IRRM

Reverse Recovery Current

Safe Operating Area

Thermal Impedence

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