STGB7NB40LZ datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

STGB7NB40LZ

2/8

THERMAL DATA

ELECTRICAL CHARACTERISTICS (TCASE = 25°C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

SWITCHING ON

Rthj-case

Thermal Resistance Junction-case Max

1.5

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max (free air)

62.5

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

BV(CES)

Collector-Emitter Clamped

Voltage

IC =10mA, VGE =0,

Tc= - 40°C to 150°C; RG=1 KΩ

370

400

430

BV(ECS)

Emitter Collector Break-down

Voltage

IEC = 75 mA, VGE =0,

BVGE

Gate Emitter Break-down

Voltage

IG =± 2 mA

ICES

Collector-Emitter Leakage

Current

VGE =200 V, VGE =0, RG=1 KΩ

Tc=25°C

Tc=150°C

250

µA

IGES

Gate-Emitter Leakage

Current (VCE =0)

VGE =± 10 V,VCE = 0

1000

µA

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGE(th)

Gate Threshold Voltage

VCE =VGE,IC = 1 mA, Tc=25°C

VCE =VGE,IC = 1 mA, Tc=150°C

1.2

0.75

2.2

1.8

VCE(SAT)

Collector-Emitter Saturation

Voltage

VGE =4.5 V, IC =7 A, Tj=25°C

VGE =5.0 V, IC =14A, Tc= 25°C

1.3

1.50

1.9

RGE

Gate Emitter Resistance

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Cies

Input Capacitance

VCE =25V,f= 1MHz, VGE =0

910

Coes

Output Capacitance

Cres

Reverse Transfer

Capacitance

Gate Charge

VCE =40V,IC =7 A,

VGE =5V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Delay Time

Current Rise Time

VCE =14V,RG =1KΩ ,

RL =1Ω, VGE =5 V

0.9

4.5

µs

td(off)

Delay Time

Current Fall Time

VCE = 300 V, RG =1KΩ ,

RL =46Ω, VGE =5 V

4.4

3.6

µs

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