STGE200NB60S datasheet(4/13 Pages) STMICROELECTRONICS

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Electrical characteristics

STGE200NB60S

4/13

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collector-emitter

breakdown voltage

IC = 250µA, VGE = 0

600

ICES

Collector cut-off

(VGE = 0)

VCE = Max rating, @ 25°C

VCE = Max rating, @ 125°C

500

µA

IGES

Gate-emitterleakage

current (VCE = 0)

VGE = ±20V, VCE = 0

±100

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 250µA

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15V, IC = 100A

VGE = 15V, IC=150A,@100°C

1.2

1.6

gfs

Forward transconductance

VCE = 15V , IC = 100A

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25V, f = 1MHz, VGE = 0

1560

1100

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 480V, IC = 100A,

VGE = 15V

560

170

ICL

Latching current

Vclamp = 480V

Tj = 125°C , RG = 10Ω

300

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