2

LSL

USL

.600

.700

.800

.900

1.000

LSL

USL

11

11.5

12

12.5

13

13.5

14

14.5

LSL

47

48

49

50

51

52

53

54

55

LSL

32.5

33

33.5

34

34.5

35

35.5

40

42

44

46

48

50

52

54

LSL

USL

.600

.700

.800

.900

1.000

LSL

USL

11

11.5

12

12.5

13

13.5

14

14.5

LSL

47

48

49

50

51

52

53

54

55

LSL

32.5

33

33.5

34

34.5

35

35.5

40

42

44

46

48

50

52

54

LSL

USL

.600

.700

.800

.900

1.000

LSL

USL

11

11.5

12

12.5

13

13.5

14

14.5

LSL

47

48

49

50

51

52

53

54

55

LSL

32.5

33

33.5

34

34.5

35

35.5

40

42

44

46

48

50

52

54

Figure 1. Ids; LSL = 690mA, nominal = 810mA, USL = 910mA

Figure 2. OIP3; LSL = 48dBm, nominal = 51dBm

Figure 3. P1dB; LSL = 33dBm, nominal = 34.5dBm

Figure 4. PAE at P1dB; nominal = 46.6%

Symbol

Parameter

Units

Absolute

Max.

Device Voltage, RF output to ground

V

5.5

Device Drain Current

mA

1500

Control Voltage

V

5.5

CW RF Input Power

dBm

28

W

8.25

Junction Temperature

°C

150

Storage Temperature

°C

-65 to 150

(Vdd = 5V, Ids = 810mA, Tc = 85°C)

Notes:

2. Operation of this device in excess of any of

these limits may cause permanent damage.

3. Thermal resistance measured using Infra-Red

measurement technique.

4. This is limited by maximum Vdd and Ids.

Derate 66.7mW/ 0C for Tc > 26.20C.

Figure 5. Gain; LSL=11.2dB, Nominal = 12.6dB, USL=14.2dB

Note:

5. Distribution data sample size is 500 samples taken from 3 different

unless otherwise specified. Future wafers allocated to this product

may have nominal values anywhere between the upper and lower

limits.

6. Measurements are made on a production test board. Input trace

losses have not been de-embedded from actual measurements.

CPK = 0.80

Std Dev = 0.04

CPK = 0.95

Std Dev = 0.889

CPK = 2.495

Std Dev = 0.134

CPK = 2.011

Std Dev = 0.184

Std Dev = 1.504