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STGW50NB60M Datasheet(PDF) 1 Page - STMicroelectronics

Part # STGW50NB60M
Description  N-CHANNEL 50A - 600V - TO-247 PowerMESH™ IGBT
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW50NB60M Datasheet(HTML) 1 Page - STMicroelectronics

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May 2003
STGW50NB60M
N-CHANNEL 50A - 600V -TO-247
PowerMESH™ IGBT
(q ) Pulse width limited by safe operating area
s
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
s
LOW ON-VOLTAGE DROP (VCESAT)
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH™ IGBTs, with outstanding performances.
The suffix "M" identifies a family optimized to
achieve very low saturation on voltage for frequency
applications <10 KHz.
APPLICATIONS
s
MOTOR CONTROL
s
WELDING EQUIPMENTS
ABSOLUTE MAXIMUM RATINGS
TYPE
VCES
VCE(sat)(25°C)
IC
STGW50NB60M
600 V
< 1.9 V50 A
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS =0)
600
V
VECR
Reverse Battery Protection
20
V
VGE
Gate-Emitter Voltage
±20
V
IC
Collector Current (continuous) at TC =25°C
100
A
IC
Collector Current (continuous) at TC =100°C
50
A
ICM ( )
Collector Current (pulsed)
400
A
PTOT
Total Dissipation at TC = 25°C
250
W
Derating Factor
2
W/°C
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
TO-247
1
2
3
INTERNAL SCHEMATIC DIAGRAM


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