STW12NA60 datasheet(2/11 Pages) STMICROELECTRONICS

2 / 11 page

THERMAL DATA

TO-218/TO-247

ISOWATT218

Rthj-case

Thermal Resist ance Junct ion-case

Max

0.66

1.56

oC/W

Rthj-amb

Rthc- sink

Thermal Resist ance Junct ion-ambient

Max

Thermal Resist ance Case-sink

Typ

Maximum Lead Temperature For Soldering Purpose

0.1

300

oC/W

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Max Value

Uni t

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max,

δ <1%)

EAS

Single Pulse Avalanche Energy

(st arting Tj =25

oC, ID =IAR,VDD =50 V)

700

EAR

Repet itive Avalanche Energy

(pulse width limited by Tj max,

δ <1%)

IAR

Avalanche Current, Repetitive or Not-Repetitive

(T c = 100

oC, pulse width limited by Tj max,

δ <1%)

7.6

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID =250

µAVGS = 0

600

IDS S

Zero Gate Volt age

Drain Current (VGS =0)

VDS =Max Rating

VDS = Max Rating x 0.8

Tc =125

250

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS =

± 30 V

± 100

ON (

∗)

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage VDS =VGS

ID =250

µA

2. 25

3. 75

RDS(on)

St atic Drain-source On

Resist ance

VGS =10V

ID =6 A

0.44

0.6

Ω

ID(on)

On St ate Drain Current

VDS >ID(on) xRDS(on)max

VGS =10 V

DYNAMIC

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

gfs (

∗)Forward

Transconductance

VDS >ID(on) xRDS(on)max

ID =6 A

Ciss

Coss

Crss

I nput Capacitance

Output Capacit ance

Reverse Transfer

Capacitance

VDS = 25V

f = 1MHz

VGS = 0

2500

310

3250

410

110

STH12NA60/FI - STW12NA60

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