STTH12002TV datasheet(3/5 Pages) STMICROELECTRONICS

3 / 5 page

STTH12002TV

3/5

100

150

200

250

300

350

400

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

I(A)

δ=tp/T

P = 40W

P = 60W

P = 80W

Fig. 1: Peak current versus duty cycle (per diode).

100

120

140

160

180

200

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

(V)

(A)

T =150°C

T =25°C

Fig. 2-1: Forward voltage drop versus forward

current (typical values, per diode).

0.1

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Z/R

th(j-c)

Single pulse

t(s)

Fig. 3: Relative variation of thermal impedance

junction to case versus pulse duration.

100

1000

100

150

200

C(pF)

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

Fig. 4: Junction capacitance versus reverse

voltage applied (typical values, per diode).

100

150

200

250

300

350

400

450

500

550

600

650

100

1000

Q (nC)

dI /dt(A/µs)

I =60A

V =160V

T =125°C

T =25°C

Fig. 5: Reverse recovery charges versus dIF/dt

(typical values, per diode).

100

120

140

160

180

200

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

(A)

(V)

T =150°C

T =25°C

Fig. 2-2: Forward voltage drop versus forward

current (maximum values, per diode).

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