STL28NF3LL datasheet(1/6 Pages) STMICROELECTRONICS

Part #	STL28NF3LL

Description	N-CHANNEL 30V - 0.0055ohm - 28A PowerFLAT™ LOW GATE CHARGE STripFET™ MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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PRELIMINARY DATA

November 2002

STL28NF3LL

N-CHANNEL 30V - 0.0055

Ω -28A PowerFLAT™

LOW GATE CHARGE STripFET™ MOSFET

(1) Starting Tj = 25°C, ID = 14A, VDD =18V

s

TYPICAL RDS(on) = 0.0055Ω

s

IMPROVED DIE-TO-FOOTPRINT RATIO

s

VERY LOW PROFILE PACKAGE

DESCRIPTION

This Power MOSFET is the second generation of

STMicroelectronics unique “STripFET™” technolo-

gy. The resulting transistor shows extremely low on-

resistance and minimal gate charge. The new Pow-

erFLAT™ package allows a significant reduction in

board space without compromising performance.

APPLICATIONS

s

DC-DC CONVERTERS

ABSOLUTE MAXIMUM RATINGS

(q) Pulse width limited by safe operating area

(#) Limited by Wire Bonding

TYPE

VDSS

RDS(on)

ID

STL28NF3LL

30 V

< 0.0065

Ω

28 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS =0)

30

V

VDGR

Drain-gate Voltage (RGS =20kΩ)

30

V

VGS

Gate- source Voltage

± 16

V

ID(#)

Drain Current (continuos) at TC = 25°C

Drain Current (continuos) at TC = 100°C

28

17.5

A

IDM ( )

Drain Current (pulsed)

112

A

PTOT

Total Dissipation at TC = 25°C

80

W

Derating Factor

0.64

W/°C

EAS (1)

Single Pulse Avalanche Energy

2

J

Tstg

Storage Temperature

–55 to 150

°C

Tj

Max. Operating Junction Temperature

PowerFLAT™(5x5)

(Chip Scale Package)

INTERNAL SCHEMATIC DIAGRAM

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