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STL34NF06 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STL34NF06
Description  N-CHANNEL 60V - 0.024ohm - 34A PowerFLAT™ LOW GATE CHARGE STripFET™ II MOSFET
PDF  6 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL34NF06 Datasheet(HTML) 1 Page - STMicroelectronics

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PRELIMINARY DATA
November 2002
STL34NF06
N-CHANNEL 60V - 0.024
Ω -34A PowerFLAT™
LOW GATE CHARGE STripFET™II MOSFET
(1) Starting Tj =25°C, ID =17A, VDD = 42V
TYPICAL RDS(on) = 0.024Ω
IMPROVED DIE-TO-FOOTPRINT RATIO
VERY LOW PROFILE PACKAGE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique “STripFET™” technolo-
gy. The resulting transistor shows extremely low on-
resistance and minimal gate charge. The new Pow-
erFLAT™ package allow a significant reduction in
board space without compramising performance.
APPLICATIONS
DC-DC CONVERTERS
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
(*) Current Limited by Wire Bonding is 20A
TYPE
VDSS
RDS(on)
ID
STL34NF06
60 V
< 0.028
Ω
34 A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS =0)
60
V
VDGR
Drain-gate Voltage (RGS =20kΩ)
60
V
VGS
Gate- source Voltage
± 20
V
ID
Drain Current (continuous) at TC = 25°C (*)
Drain Current (continuous) at TC = 100°C
34
20
A
A
IDM ( )
Drain Current (pulsed)
136
A
PTOT
Total Dissipation at TC = 25°C
70
W
Derating Factor
0.56
W/°C
EAS (1)
Single Pulse Avalanche Energy
250
mJ
Tstg
Storage Temperature
–55 to 150
°C
Tj
Max. Operating Junction Temperature
PowerFLAT™(5x5)
(Chip Scale Package)
INTERNAL SCHEMATIC DIAGRAM


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