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STM915-16 Datasheet(PDF) 2 Page - STMicroelectronics

Part # STM915-16
Description  RF POWER MODULE GSM MOBILE APPLICATIONS
PDF  7 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM915-16 Datasheet(HTML) 2 Page - STMicroelectronics

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ELECTRICAL SPECIFICATIONS (Tcase
= 25°C, VS1, VS3 = 8.0 Vdc; VS2, VS4 = 12.5 Vdc)
Symb ol
Parameter
T est Con dition s
Val ue
Unit
Min.
Typ .
Max.
BW
Frequency Range
890
915
MHz
POUT
Output Power
1,2
VCONT
= 4.0 Vdc
PIN
= 1mW
16
W
η
Efficiency
1, 2
POUT
= 16 W
35
41
%
IQ1
Leakage Current,
VS1 ,VS2
VCONT
= 0Vdc
PIN
= 1mW
0.5
2.0
mA
IQ2
Bias Current ,
VS3
VCONT
= 0Vdc
PIN
= 1mW
140
150
mA
IQ3
Quiescent Current,
VS4
VCONT
= 0Vdc
PIN
= 1mW
200
250
mA
Control Dynamic
Range
3
VCONT
= 0to4.0V
56
dB
Isolation
VCONT
= 0Vdc
VS2, S4
= 0 to 15.6V
−14
dBm
H
Harmonics
1, 2
POUT
= 42 dBm reference
−45
dBc
VSWRIN Input VSW R
1,2
POUT
= +13dBm to +42dBm
2.0: 1
VCONT
Control Voltage
0
4.0
Vdc
ICONT
Control Current
1.0
2.0
mA
Tr
Rise Time
1, 2, 4
POUT
= +13 to +42 dBm
1.0
µSec
Noise Power
30 KHz Bandwidth, 20 MHz above f0
POUT
= +13dBm to +42dBm CW
−70
−65
dBm
Stability
1, 2
POUT
= − 14 to +42 dBm
VS2,VS4
= 10.8to 15.6V
Load VSWR
= 6:1 Source VSWR = 3:1
All phase angles
TC
= − 20 to +60°C
All Spurious outputs more
than 60dB below carrier
Load Mismatch
1,2
VSW R
= 10:1 All phase angles
V
= 15.6Vdc
POUT
= 16 W
No Degradation in Output
Power
Notes: 1) PIN
= 1.0mW adjust V
CONTROL for specified POUT.3) POUT (Reference)
= 42 dBm
2) Pulse Width
= 577 µsec.
4)Tr measured at 1% to 81% of POUT in watts
Repetition rate
= 4.6 msec.
GSM SPECIFIC TESTS
Symbol
Parameter
T est Co nditi ons
Val ue
Unit
Min.
T yp.
Max.
AM/AM Conversion
Gain
PIN
= fo (0 dBm)+[fo +200 kHz(− 40 dBm)]
VCONTROL adjusted for
POUT
= 13, 30, 42 dBm
POUT (fo +200 kHz)
POUT (fo
− 200 kHz)
− 40
− 45
dBc
dBc
AM/PM Conversion
POUT
= +13 to + 42 dBm
PIN varied +/
− .5 dB
4
°/dB
REF. 1014655E
STM915-16
2/7



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