74V1T66STR datasheet(4/11 Pages) STMICROELECTRONICS

4 / 11 page

74V1T66

4/11

CAPACITIVE CHARACTERISTICS

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) =CPD xVCC xfIN +ICC

ANALOG SWITCH CHARACTERISTICS (GND = 0V; TA = 25°C)

(*) Voltage range is 5.0V

± 0.5V

Symbol

Parameter

Test Condition

Value

Unit

TA = 25°C

-40 to 85°C

-55 to 125°C

Min.

Typ.

Max.

Min.

Max.

Min.

Max.

CIN

Input Capacitance

310

CI/O

Output

Capacitance

CPD

Power Dissipation

Capacitance

(note 1)

3pF

Symbol

Parameter

Test Condition

Value

Unit

VCC

(V)

VIN

(Vp-p)

Typ.

Sine Wave

Distortion (THD)

5.0(*)

fIN =1 KHz RL =10 KΩ,CL =50 pF

0.04

fMAX

Frequency

Response

(Switch ON)

5.0(*)

Adjust fIN voltagetoobtain0dBat VOS.

Increase fIN Frequency until dB meter reads -3dB

RL =50Ω,CL =10pF

180

MHz

Feed through

Attenuation

(Switch OFF)

5.0(*)

VIN is centered at VCC/2

Adjust fIN Voltage to obtained 0dBm at VIS

RL = 600Ω,CL =50 pF, fIN =1KHzsinewave

-60

Crosstalk (Control

Input to Signal

Output)

5.0(*)

RL =600Ω,CL =50pF, fIN = 1KHz square wave

tr =tf = 6ns

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