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ESDALC6V1-1BM2 Datasheet(PDF) 2 Page - STMicroelectronics |
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ESDALC6V1-1BM2 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 10 page ![]() Characteristics ESDALC6V1-1BM2 2/10 1 Characteristics Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Value Unit VPP (1) 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Peak pulse voltage (IEC 61000-4-2 contact discharge) ± 30 kV PPP (1) Peak pulse power dissipation (8/20 µs) Tj initial = Tamb 140 W IPP Repetitive peak pulse current (8/20 µs) 9 A Tj Junction temperature 125 °C Tstg Storage temperature range - 55 to + 150 °C TL Maximum lead temperature for soldering during 10 s 260 °C TOP Operating temperature range - 40 to + 125 °C Table 2. Electrical characteristics (Tamb = 25 °C) Symbol Parameter VRM Stand-of voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current @ VRM IPP Peak pulse current VF Forward voltage drop Order code VBR @ IR IRM @ VRM Rd αT C@0 V Bias min. max. max. typ. max. typ. VV mA nA V Ω 10-4/°C pF ESDALC6V1-1BM2 6.1 8.0 1 100 3 0.65 2.5 22 VBR VRM VRM VBR V IR I IR IRM IRM |
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