IRFIB7N50LPbF

8/23/04

www.irf.com

1

SMPS MOSFET

TO-220 Full-Pak

S

D

G

Features and Benefits

• SuperFast body diode eliminates the need for external

diodes in ZVS applications.

• Lower Gate charge results in simpler drive requirements.

• Enhanced dv/dt capabilities offer improved ruggedness.

• Higher Gate voltage threshold offers improved noise

immunity

.

Applications

• Zero Voltage Switching SMPS

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

• Motor Control applications

• Lead-Free

PD - 95750

500V

320m

Ω

85ns

6.8A

Absolute Maximum Ratings

Parameter

Max.

Units

6.8

4.3

A

Pulsed Drain Current

™

27

46

W

Linear Derating Factor

0.37

W/°C

Gate-to-Source Voltage

±30

V

dv/dt

Peak Diode Recovery dv/dt

e

24

V/ns

Operating Junction and

-55 to + 150

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Mounting torque, 6-32 or M3 screw

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

–––

–––

6.8

MOSFET symbol

(Body Diode)

A

showing the

Pulsed Source Current

–––

–––

27

integral reverse

(Body Diode)

Ù

p-n junction diode.

Diode Forward Voltage

–––

–––

1.5

V

Reverse Recovery Time

–––

85

130

ns

–––

130

200

f

Reverse Recovery Charge

–––

280

420

–––

570

860

f

Reverse Recovery Current

–––

5.9

8.9

A

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

10lb

xin (1.1Nxm)