STP12PF06 datasheet(1/8 Pages) STMICROELECTRONICS

Part #	STP12PF06

Description	P - CHANNEL 60V - 0.18 ohm - 12A TO-220 STripFET POWER MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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STP12PF06

P - CHANNEL 60V - 0.18

Ω - 12A TO-220

STripFET

™ POWER MOSFET

s

TYPICAL RDS(on) = 0.18

Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

LOW GATE CHARGE

s

APPLICATION ORIENTED

CHARACTERIZATIONL

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics

unique

”Single

Feature

Size

™” strip-based process. The resulting transi-

stor shows extremely high packing density for low

on-resistance, rugged avalanche characteristics

and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

s

MOTOR CONTROL

s

DC-DC & DC-AC CONVERTERS

®

INTERNAL SCHEMATIC DIAGRAM

May 2000

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Unit

VDS

Drain-source Volt age (VGS =0)

60

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)60

V

VGS

Gat e-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc =25

oC12

A

ID

Drain Current (continuous) at Tc =100

oC8.4

A

IDM(

•)

Drain Current (pulsed)

48

A

Ptot

Tot al Dissipation at Tc =25

oC60

W

Derating F act or

0.4

W /

oC

dv/dt

Peak Diode Recovery voltage slope

6

V/ns

Tstg

Storage T emperature

-65 to 175

oC

Tj

Max. Operating Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 12 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed

TYPE

VDSS

RDS(o n)

ID

STP12PF06

60 V

< 0.20

Ω

12 A

1

2

3

TO-220

1/8

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