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VB60100C Datasheet(PDF) 3 Page - Vishay Siliconix |
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VB60100C Datasheet(HTML) 3 Page - Vishay Siliconix |
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3 / 5 page ![]() New Product V60100C & VB60100C Vishay General Semiconductor Document Number: 88942 Revision: 16-Jan-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 4. Typical Reverse Characteristics Per Diode T A = 150 °C T A = 100 °C T A = 25 °C T A = 125 °C Instantaneous Forward Voltage (V) 0 0.2 0.4 0.6 0.8 1 100 10 1 0.1 T A = 150 °C T A = 125 °C T A = 100 °C T A = 25 °C 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) 100 10 1 0.1 0.0001 0.01 0.001 Figure 5. Typical Junction Capacitance Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode 0.1 1 10 100 10000 1000 100 Reverse Voltage (V) T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p 0.01 0.1 1 10 100 10 1 0.1 t - Pulse Duration (s) |
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