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LFTVS7-1F3 Datasheet(PDF) 2 Page - STMicroelectronics |
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LFTVS7-1F3 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() Characteristics LFTVS7-1F3 2/8 1 Characteristics Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Test condition Value Unit PPP Peak pulse power dissipation (10/1000 µs pulse) Tj initial = Tamb 75 W Peak pulse power dissipation (8/20 µs pulse) 350 IFSM Non repetitive surge peak forward current tp = 10 ms Tj initial = Tamb 11 A Tj Maximum operating junction temperature 125 °C Tstg Storage temperature range -55 to +150 °C Table 2. Electrical characteristics (Tamb = 25 °C) Symbol Parameter VBR Breakdown voltage IRM Leakage current @ VRM VRM Stand-off voltage VCL Clamping voltage Rd Dynamic impedance IPP Peak pulse current αT Voltage temperature coefficient VF Forward voltage drop Symbol Test conditions Min. Typ. Max. Unit VBR IR = 15 mA 7 V IRM VRM = 5.5V 500 nA VCL IPP = 1 A (1) 1. 8 / 20 µs pulse waveform 10 V VF IF = 850 mA 1.05 V αT 610-4/ °C Cline VR = 0 V, VOSC = 30 mV, F = 1 MHz 320 pF I V IF IRM IPP VRM VF VBR Slope = 1/Rd VCL |
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