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STM8AP5X73TAY Datasheet(PDF) 56 Page - STMicroelectronics |
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STM8AP5X73TAY Datasheet(HTML) 56 Page - STMicroelectronics |
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56 / 100 page ![]() Electrical characteristics STM8AF61xx, STM8AF51xx 56/100 Table 15. Current characteristics Symbol Ratings Max. Unit IVDD Total current into VDD power lines (source) (1)(2) 1. All power (VDD, VDDIO, VDDA) and ground (VSS, VSSIO, VSSA) pins must always be connected to the external supply. 2. The total limit applies to the sum of operation and injected currents. 60 mA IVSS Total current out of VSS ground lines (sink) (1)(2) 60 IIO Output current sunk by any I/O and control pin 20 Output current source by any I/Os and control pin - 20 IINJ(PIN) (3) 3. IINJ(PIN) must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum cannot be respected, the injection current must be limited externally to the IINJ(PIN) value. A positive injection is induced by VIN > VDD while a negative injection is induced by VIN < VSS. For true open-drain pads, there is no positive injection current allowed and the corresponding VIN maximum must always be respected. Injected current on NRST pin ± 10 Injected current on OSCIN pin ± 10 Injected current on any other pin ± 10 ΣIINJ(PIN)(4) 4. When several inputs are submitted to a current injection, the maximum ΣI INJ(PIN) is the sum of the absolute positive and negative injected currents (instantaneous values). These results are based on characterization with ΣIINJ(PIN) maximum current injection on four I/O port pins of the device. Total injected current (sum of all I/O and control pins) ± 20 Table 16. Thermal characteristics Symbol Ratings Value Unit TSTG Storage temperature range -65 to +150 °C TJ Maximum junction temperature 150 |
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