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STP36NE06FP Datasheet(PDF) 1 Page - STMicroelectronics |
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STP36NE06FP Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 9 page  STP36NE06 STP36NE06FP N - CHANNEL 60V - 0.032 Ω - 36A - TO-220/TO-220FP STripFET ™ POWER MOSFET s TYPICAL RDS(on) = 0.032 Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW GATE CHARGE 100 oC s APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size ™ ” strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalance characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS ® INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t STP36NE06 STP36NE06FP VDS Drain-source Volt age (VGS =0) 60 V VDGR Drain- gate Voltage (RGS =20 k Ω) 60 V VGS Gat e-source Voltage ± 20 V ID Drain Current (continuous) at Tc =25 o C36 20 A ID Drain Current (continuous) at Tc =100 oC24 14 A IDM( •) Drain Current (pulsed) 144 144 A Ptot Tot al Dissipation at Tc =25 oC100 35 W Derating F act or 0.66 0. 27 W/ oC VISO Insulat ion Withstand Volt age (DC) 2000 V dv/dt Peak Diode Recovery voltage slope 7 V/ ns Tstg Storage T emperat ure -65 to 175 oC Tj Max. O perating Junction Temperature 175 oC ( •) Pulse width limited by safe operating area (1)ISD ≤ 36 A,di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX TYPE VDSS RDS(on) ID ST P36NE06 ST P36NE06FP 60 V 60 V <0.040 Ω <0.040 Ω 36 A 20 A July 1998 TO-220 TO-220FP 1 2 3 1 2 3 1/9 |
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