43BDIE2V datasheet(3/12 Pages) STMICROELECTRONICS

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RHF43B

Electrical characteristics

3/12

Electrical characteristics

Table 3.

VCC = +16V, VDD = 0V, Vicm = VCC/2, Tamb = 25°C, RL connected to VCC/2 (unless

otherwise specified)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

DC performance

Vio

Offset voltage

T= 25°C

100

300

µV

Tmin < Top < Tmax

500

DVio

Input offset voltage drift

μV/°C

Iib

Input bias current

Vicm = VCC/2, T = 25°C

Tmin < Top < Tmax

100

DIib

Input offset current temperature

drift

100

pA/°C

Iio

Input offset current

(Vout =VCC/2)

Vicm = VCC/2, T = 25°C

Tmin < Top < Tmax

115

CMR

Common mode rejection ratio

0 < Vicm < 16V

Tmin < Top < Tmax

110

SVR

Supply rejection ratio

3V < VCC <16V, Vicm =VCC/2

Tmin < Top < Tmax

120

AVD

Large signal voltage gain

RL = 10kΩ, Vout= 0.5V to 15.5V

Tmin < Top < Tmax

VOH

High level output voltage

RL =1kΩ connected to VCC/2

Tmin < Top < Tmax

15.7

15.6

15.8

RL = 10kΩ connected to VCC/2

Tmin < Top < Tmax

15.9

15.8

15.96

VOL

Low level output voltage

RL =1kΩ connected to VCC/2

Tmin. < Top < Tmax.

0.1

0.2

0.3

RL = 10kΩ connected to VCC/2

Tmin < Top < Tmax

0.04

0.06

0.1

Iout

Output sink current

Vout = VCC

Tmin < Top < Tmax

Output source current

Vout = VDD

Tmin < Top < Tmax

ICC

Supply current

No load

Tmin < Top < Tmax

2.5

2.9

AC performance

GBP

Gain bandwidth product

RL=1kΩ, CL= 100pF, f= 100kHz

Tmin < Top < Tmax

3.5

MHz

Unity gain frequency

RL=1kΩ, CL= 100pF

MHz

φm

Phase margin

RL =1kΩ, CL = 100pF, G=5

Degrees

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