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STP40NF10L Datasheet(PDF) 1 Page - STMicroelectronics

Part # STP40NF10L
Description  N-CHANNEL 100V - 0.028ohm - 40A TO-220 LOW GATE CHARGE STripFET POWER MOSFET
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP40NF10L Datasheet(HTML) 1 Page - STMicroelectronics

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June 2002
STP40NF10L
N-CHANNEL 100V - 0.028
Ω - 40A TO-220
LOW GATE CHARGE STripFET™ POWER MOSFET
(1) Starting Tj = 25°C, ID = 20A, VDD = 40V
s
TYPICAL RDS(on) = 0.028Ω
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
s
AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
(q) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STP40NF10L
100 V
< 0.033
Ω
40 A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
100
V
VGS
Gate- source Voltage
± 17
V
ID
Drain Current (continuos) at TC = 25°C
40
A
ID
Drain Current (continuos) at TC = 100°C
25
A
IDM (l)
Drain Current (pulsed)
160
A
PTOT
Total Dissipation at TC = 25°C
150
W
Derating Factor
1
W/°C
EAS (1)
Single Pulse Avalanche Energy
430
mJ
Tstg
Storage Temperature
–65 to 175
°C
Tj
Max. Operating Junction Temperature
175
°C
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM


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